MSA-0200

Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0200 Features Cascadable 50 Ω Gain Block 3 dB Bandwidth: DC to 2.8 GHz 12.0 dB Typical Gain at 1.0␣ GHz Unconditionally Stable (k>1) The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, “Chip Use”. Chip Outline[1] Description The MSA-0200 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications. Note: 1. This chip contains additional biasing options. The performance specified applies only to the bias option whose bond pads are indicated on the chip outline. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information. Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) C block IN MSA C block OUT Vd = 5 V 5965-9695E 6-266 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Powe...