MS2214

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2214 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features GOLD METALLIZATION EMITTER SITE BALLASTED Pout = 85 W MINIMUM Gp = 7.5 dB OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE LOW THERMAL RESISTANCE DESCRIPTION: The MS2214 is a silicon NPN bipolar transistor designed for avionics applications with high duty cycle requirements. Gold metallization and emitter DataSheet4U.com ballasting provides long term reliability under JTIDS and similar pulse formats. DataShee ABSOLUTE MAXIMUM RATINGS Symbol VCC IC PDISS TJ T STG (Tcase = 25° C) Value 40 8.0 300 +250 - 65 to + 200 Parameter Collector-Supply Voltage* Device Current* Power Dissipation* Junction Temperature Storage Temperature Unit V A W °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance* 0.75 ° C/W * Applies only to rated RF operation. DataSheet4U.com Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DataSheet 4 U .com www.DataSheet4U.com MS2214 STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) Symbol BVCBO BVCER BVEBO Test Conditions IC = 25mA IC = 25 mA IE = 10 mA VCE = 35 V VCE = 5 V IE = 0 mA RBE = 10 Ω IC = 0 mA VB E = 0 V IC = 2A Min. 55 55 3.5 ---20 Value Typ. ---------------- Max. ---------20 200 Unit V V V m...