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MS2206...
www.DataSheet4U.com
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MS2206
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Features
1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION
.280 4LSL (M115) Epoxy Sealed
DESCRIPTION:
The MS2206 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse DataSheet4U.com conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions.
DataShee
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
PDISS VCE TJ IC T STG
Parameter
Power Dissipation Collector-Emitter Bias
Voltage Junction Temperature Device Current Storage Temperature
Value
7.5 37 200 1.0 -65 to +200
Unit
W V
ºC
A
ºC
Thermal Data
RTH(J-C) Junction-case Thermal Resistance* 35 ° C/W
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MS2206
ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C)
Symbol
BVCBO BVCEO BVEBO ICES HFE IC = 1 mA IC = 5 mA IE = 1.0 mA VCE = 35 V VCE = 5 V
STATIC
Test Conditions
IE = 0 mA IB = 0mA IC = 0 mA IC = 100 mA
Min.
45 20 3.5 --20
Value Typ.
-----------
Max.
------1.0 120
Unit
V V V mA ---
DYNAMIC
Sym...