MS18N50

MS18N50 500V N-channel MOSFET Description The MS18N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics 100% EAS Test Extended Safe Operating Area RoHS compliant package Application High current, High speed switching PFC (Power Factor Correction) SMPS (Switched Mode Power Supplies) Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter Value Unit VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) 500 V ±30 V 18 A 10.8 A IDM Drain Current -Pulsed 72 A EAS Single Pulsed Avalanche Energy 990 mJ EAR Repetitive Avalanche Energy 23.5 mJ dV/dt Peak Diode Recovery dV/dt 4.5 V/ns TJ, Tstg Operating Junction and Storage Temperature -55~+150 °C Power Dissipation (TC=25°C) PD Power Dissipation (TC=100°C) 238 W 1.8 W Drain current limited by maximum junction temperature Publication Order Number: [MS18N50] © Bruckewell Technology Corporation Rev. A -2014 MS18N50 500V N-channel MOSFET Thermal Characteristics Symbol Parameter Rthjc Thermal Resistance resistance Rθ...