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MS17

Mospec Semiconductor

Schottky Barrier rectifiers

MOSPEC Surface Mount Schottky Barrier rectifiers Using the Schottky Barrier principle with a Molybdenum barrier meta. Th...


Mospec Semiconductor

MS17

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Description
MOSPEC Surface Mount Schottky Barrier rectifiers Using the Schottky Barrier principle with a Molybdenum barrier meta. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Featres *Low Forward Voltage. *Low Switching noise. *High Current Capacity *Guarantee Reverse Avalanche. *Guard-Ring for Stress Protection. *Low Power Loss & High efficiency. *150℃ Operating Junction Temperature *Low Stored Charge Majority Carrier Conduction. *Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O * ESD: 8KV(Min.) Human-Body Model * In compliance with EU RoHs 2002/95/EC directives MS17 thru MS19 SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 20-40 VOLTS DO-214AA(SMB) MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol VRRM VRWM VR VR(RMS) MS17 20 14 MS18 30 21 MS19 40 28 Unit V V Average Rectifier Forward Current IO Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range IFSM TJ , TSTG 1.0 25 -65 to +150 A A ℃ THERMAL RESISTANCES Typical Thermal Resistance junction to case Rθ j-c 60 ℃/w ELECTRIAL CHARACTERISTICS...




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