MS1527

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1527 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS Features 400 MHz 28 VOLTS POUT = 25 WATTS GP = 9 dB GAIN MINIMUM EMITTER BALLASTED METAL/CERAMIC PACKAGE INTERNAL INPUT MATCHING REFRACTORY/GOLD METALIZATION DESCRIPTION: The MS1527 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for superior ruggedness. The MS1527 can withstand 20:1 VSWR under rated operating conditions and is internally input matched to optimize power gain and efficiency over the band. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 60 30 3.5 3.0 70 +200 -65 +150 Unit V V V A W °C °C Thermal Data RTH(J-C) Thermal Resistance Junction-case 2.5 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1527 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) Symbol BVCBO BVEBO BVCES ICBO HFE IC = 50 mA IE = 5 mA IC = 50 mA VCB = 30 V VCE = 5 V STATIC Test Conditions Min. IE = 0mA IC = 0 mA VBE = 0 V IE = 0 mA IC = 500 A 60 3.5 60 --10 Value Typ. ----------- Max. ------3.0 120 Unit V V V mA --- DY...