MS14N60

MS14N60 900V N-Channel MOSFET Description The MS14N60 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Application Adapter Switching Mode Power Supply Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage Drain Current -Continuous (TC=25°C) ID Drain Current -Continuous (TC=100°C) IDM Drain Current -Pulsed IAR Avalanche Current EAS Single Pulsed Avalanche Energy EAR dV/dt Repetitive Avalanche Energy Peak Diode Recovery dV/dt TJ Storage Temperature Power Dissipation (TC=25°C) PD Derate above 25C Drain current limited by maximum junction temperature Value 600 ±30 14 8.4 56 14 53 16 4.5 150 60 0.35 Unit V V A A A A mJ mJ V/ns °C W W/°C Publication Order Number: [MS14N60] © Bruckewell Technology Corporation Rev. A -2014 MS14N60 900V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter TSTG Operating Junction and Storage Temperature Maximum lead temperature for soldering purposes, TL 1/8'' from case for 5 seconds Note: 1. Re...