MS1001

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1001 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS www.datasheet4u.com Features 30 MHz 12.5 VOLTS IMD = -32 dBc INFINITE VSWR CAPABILITY @ RATED CONDITIONS POUT = 75 WATTS GP = 13dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications. Diffused emitter resistors provide infinite VSWR capability under rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C) Symbol VCBO VCEO VEBO IC PD Tj T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Total Dissipation Junction Temperature Storage Temperature Value 36 18 4.0 20 270 200 -65 to +150 Unit V V V A W ºC ºC Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.65 ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1001 www.datasheet4u.com STATIC ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) Symbol BVCBO BVCES BVCEO BVEBO ICES hFE IC = 50 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 15 V VCE = 5 V Test Conditions IE = 0 mA VBE = 0 V IB = 0 mA IC = 0 mA IE = 0 mA IC = 5 A Min. 36 36 18 4.0 --20 Value Typ. ------------- Max. --------15 200 Unit V ...