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MRFG35010

Part Number	MRFG35010
Manufacturer	Freescale Semiconductor
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Published	Dec 4, 2006
Detailed Description	com Freescale Semiconductor Technical Data MRFG35010 Rev. 6, 12/2004 Gallium Arsenide PHEMT RF Power ...
Datasheet	MRFG35010 PDF File

Overview

...Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.
8 to 3.
6 GHz.
Device is unmatched and is suitable for use in Class AB or Class A linear base station applications.
• Typical W−CDMA Performance: −42 dBc ACPR, 3.
55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.
84 MHz BW, 64 DPCH (8.
5 dB P/A @ 0.
01% Probability) Output Power — 1 Watt Power Gain — 10 dB Efficiency — 30% • 10 Watts P1dB @ 3.
55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity MRFG35010 3.
5 GHz, 10 W, 12 V POWER FET GaAs PHEMT CASE 360D−02, STYLE 1 NI−360HF Table 1.
Maximum Ratings Rating Drain−Source Voltage Total Devi...

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