Gallium Arsenide PHEMT RF Power Field Effect Transistor
Description
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Freescale Semiconductor Technical Data
Document Number: MRFG35005MT1 Rev. 2, 5/2005
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. Typical W - C...
