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MRFG35005MT1 Datasheet

Part Number MRFG35005MT1
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description Gallium Arsenide PHEMT RF Power Field Effect Transistor
Datasheet MRFG35005MT1 DatasheetMRFG35005MT1 Datasheet (PDF)

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output P.

  MRFG35005MT1   MRFG35005MT1






Gallium Arsenide PHEMT RF Power Field Effect Transistor

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 450 mWatt Power Gain — 11 dB Efficiency — 25% • 4.5 Watts P1dB @ 3.55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • N Suffix Indicates Lead - Free Terminations • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35005NT1 MRFG35005MT1 3.5 GHz, 4.5 W, 12 V POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate - Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range Symbol VDSS PD VGS Pin Tstg Tch TC Value 15 10.5 0.07 (2) -5 30 - 65 to +150 175 - 20 to +85 (2) Unit Vdc W W/°C Vdc dBm °C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Class AB Symbol RθJC Value 14.2 (2) Unit °C/W Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD -.


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