MRFG35003M6T1

www.DataSheet4U.com MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG35003M6T1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications. Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 mA Output Power — 450 mWatts Power Gain — 9 dB Efficiency — 24% 3 Watts P1dB @ 3.55 GHz Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35003M6T1 3.5 GHz, 3 W, 6 V POWER FET GaAs PHEMT Freescale Semiconductor, Inc... CASE 466–02, STYLE 1 PLD–1.5 PLASTIC MAXIMUM RATINGS Rating Drain–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Gate–Source Voltage RF Input Power Storage Temperature Range Channel Temperature(1) Operating Case Temperature Range Symbol VDSS PD VGS Pin Tstg Tch TC Value 8 22.7(2) 0.15(2) –5 24 – 65 to +150 175 – 20 to +85 Unit Vdc Watts W/°C Vdc dBm °C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 6.6(2) Unit °C/W MOISTURE SENSITIVITY LEVEL Test Methodology Per JESD 22–A113 (1) For reliable operation, the operating channel temperature should not exceed 150°C. (2) Simulated. Rating 1 ...