MRF959T1

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF959T1/D The RF Line NPN Silicon Low Noise Transistors Motorola’s MRF959 is a high performance silicon NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF959 is well suited for low voltage applications. This device features a 9 GHz DC current gain–bandwidth product with excellent linearity. Low Noise Figure, NFmin = 1.3 dB (Typ) @ 1 GHz @ 5 mA High Current Gain–Bandwidth Product, ft = 9 GHz @ 30 mA Maximum Available Gain, MAG = 17 dB (Typ) @ 1 GHz @ 15 mA Output Third Order Intercept, OIP3 = +30 dBm @ 1 GHz @ 30 mA Fully Ion–Implanted with Gold Metallization and Nitride Passivation Available in Tape and Reel Packaging Options: T1 Suffix = 3,000 Units per Reel MRF959T1 ICmax = 100 mA LOW NOISE TRANSISTORS CASE 463–01, STYLE 1 (SC–90) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Power Dissipation (1) TC = 75°C Derate linearly above TC = 75°C @ Collector Current — Continuous (2) Maximum Junction Temperature Storage Temperature Thermal Resistance, Junction to Case DataShee DataSheet4U.com Symbol VCEO VCBO VEBO PDmax IC TJmax Tstg RθJC Value 10 20 1.5 0.150 2 100 150 – 55 to +150 500 Unit Vdc Vdc Vdc Watts mW/°C mA °C °C °C/W DEVICE MARKINGS MRF959T1 = V1 (1) To calculate the junction temperature use TJ = (PD x RθJC) + TC. The case temperature is measured on collector lead adjacent to the p...