MRF951

www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF951 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Fully Implanted Base and Emitter Structure. High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz Low Noise Figure – 1.3dB @ 1GHz Ftau - 8.0 GHz @ 6v, 30mA Cost Effective Macro X Package Macro X DESCRIPTION: Designed for use in high gain, low noise small-signal amplifiers. DataSheet4U.com ee DataSh ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 10 20 1.5 100 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 75ºC .475 Storage Junction Temperature Range -65 to +150 Maximum Junction Temperature 150 ºC ºC Watts Tstg TJmax DataSheet4U.com MSC1326.PDF 10-25-99 DataSheet 4 U .com www.DataSheet4U.com MRF951 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO ICBO IEBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 0.1 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCE = 10 Vdc, VBE = 0 Vdc) Collector Cutoff Current (VCE = 1.0 Vdc, VBE = 0 Vdc) 10 20 Value Typ. Max. 0.1 0.1 Unit Vdc Vdc µA µA m et4U.co (on) HFE DC Current Gain (IC = 5.0 mAdc, VCE = 6.0 Vdc) ee DataSh DataSheet4U.com 50 - 200 - DYNAMIC Symbol CCB Ftau Test Conditions Min. Collector-Base Ca...