MRF9045MR1

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data MRF9045MR1 Rev. 9, 5/2006 Replaced by MRF9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. Typical Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 19 dB Efficiency — 41% (Two Tones) IMD — - 31 dBc Integrated ESD Protection Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. 200_C Capable Plastic Package TO - 272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. TO - 270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MRF9045MR1 MRF9045MBR1 945 MHz, 45 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 08, STYLE 1 TO - 270 PLASTIC MRF9045MR1 CASE 1337 - 03, STYLE 1 TO - 272 DUAL LEAD PLASTIC MRF9045MBR1 Table 1. Maximum Ratings Rat...