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Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 28 volt base station equipment.
• Typical Two--Tone Performance at 945 MHz, 28 Volts Output Power — .
RF Power FET
LIFETIME BUY
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 28 volt base station equipment.
• Typical Two--Tone Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 18.8 dB Efficiency — 42% IMD — --32 dBc
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power
Features
• Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large--Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Document Number: MRF9045 Rev. 11, 9/2008
MRF9045LR1 MRF9045LSR1
945 MHz, 45 W, 28 V LATERAL N--CHANNEL
BROADBAND RF POWER MOSFETs
CASE 360B--05, STYLE 1 NI--360
MRF9045LR1
Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range Case Operating Temperature Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case
Table 3. ESD Protection Charac.