MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF9030/D
The RF Sub–Micron MOSFET Line
RF Power Field ...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF9030/D
The RF Sub–Micron
MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral
MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. Typical Two–Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — –32.5 dBc Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRF9030R1 MRF9030SR1
945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER
MOSFETs
CASE 360B–05, STYLE 1 NI–360 MRF9030R1
CASE 360C–05, STYLE 1 NI–360S MRF9030SR1
MAXIMUM RATINGS
Rating Drain–Source
Voltage Gate–Source
Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature MRF9030R1 MRF9030SR1 Symbol VDSS VGS PD PD Tstg TJ Value 68 –0.5, +15 92 0.53 117 0.67 –65 to +200 200 Unit Vdc Vdc Watts W/°C Watts W/°C °C °C
ESD PROTECTION CHARACTERISTICS
Test Conditions H...
