MRF8372R2

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF8372/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60% (Typ) State–of–the–Art Technology Fine Line Geometry Gold Top Metal and Wires Silicon Nitride Passivated Ion Implanted Arsenic Emitters Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. Order MRF8372 in tape and reel packaging by adding suffix: R1 suffix = 500 units per reel R2 suffix = 2,500 units per reel CASE 751–05, STYLE 1 SORF (SO–8) MRF8372R1, R2 750 mW, 870 MHz RF LOW POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 75°C (1) Derate above 75°C Storage Temperature Range Maximum Junction Temperature Symbol VCEO VCBO VEBO IC PD TJ, Tstg TJmax Symbol RθJC Value 16 36 4.0 200 1.67 22.2 – 55 to +150 150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Max 45 Unit °C/W DEVICE MARKING ww.DataSheet4U.com MRF8372 = 8372 NOTE: 1. Case temperature measured on collector lead immediately adjacent to body of package. (Replaces MRF837/D) RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997...