MRF8003

MRF8003 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a Ta = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO VEBO >C PD Tstg Value 30 50 3.0 0.5 1.0 5.7 -65 to +200 Unit Vdc Vdc Vdc Adc Watt mW/°C °C CASE 79-02, STYLE 1 TO-39 (TO-205AD) RF AMPLIFIER TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.; Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage cVoltage c(l = 0.1 mAdc, V B e = 0) Emitter-Base Breakdown Voltage (IE = 0.5 mAdc, lc = 0) Collector Cutoff Current (V C B = 12 Vdc, l£ = 0) ON CHARACTERISTICS DC Current Gain dC = 100 mAdc, Vce = 10 Vdc) SMALL-SIGNAL CHARACTERISTICS Output Capacitance (Vcb = 12.5 Vdc, Ie = 0, f = 1.0 MHz) FUNCTIONAL TEST (FIGURE 1) Common-Emitter Amplifier Power Gain (Vce = 12.5 Vdc, Pout = 0.5 W, f = 27 MHz) Collector Efficie...