RF Power Field Effect Transistors
Description
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Freescale Semiconductor Technical Data
Document Number: MRF7S19080H Rev. 0, 1/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Cl...
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