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MRF646

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

www.DataSheet4U.net MRF646 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF646 is designed for 12.5 UHF large ...


Advanced Semiconductor

MRF646

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Description
www.DataSheet4U.net MRF646 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF646 is designed for 12.5 UHF large signal applications up to 512 MHz. PACKAGE STYLE .500 6L FLG C A 3 D 1 2x Ø N FU LL R FEATURES: Internal Input Matching Network PG = 4.8 dB at 45 W/470 MHz Omnigold™ Metalization System Common Emitter, 12.5 V operation D IM 2 B G .725/18,42 F E 4 K H M IN IM U M inches / m m M L J I M AX IM U M inches / m m MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 9.0 A 36 V 16 V 4.0 V 117 W @ TC = 25°C -65 °C to +200 °C -65 °C to +150 °C 1.5 °C/W A B C D E F G H I J K L M N .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43 1 = COLLECTOR 2 = BASE 3&4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICES hFE Cob PG ηC IC = 20 mA IC = 20 mA IE = 5.0 mA VCE = 15 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 16 36 4.0 10 UNITS V V V mA --pF dB % VCE = 5.0 V VCB = 12.5 V VCE = 12.5 V IC = 4.0 A f = 1.0 MHz POUT = 45 W f = 470 MHz 20 90 4.8 55 5.4 60 150 125 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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