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MRF6414 Datasheet

Part Number MRF6414
Manufacturers Motorola
Logo Motorola
Description RF POWER TRANSISTOR
Datasheet MRF6414 DatasheetMRF6414 Datasheet (PDF)

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6414/D NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts Minimum Gain = 8.5 dB @ 960 MHz, Class AB Minimum Efficiency = 50% @ 960 MHz, 50 Watts • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • .

  MRF6414   MRF6414






Part Number MRF641
Manufacturers Motorola
Logo Motorola
Description RF POWER TRANSISTOR
Datasheet MRF6414 DatasheetMRF641 Datasheet (PDF)

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF641/D NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics — Output Power = 15 Watts Minimum Gain = 7.8 dB Efficiency = 55% • Characterized with Series Equivalent Large–Signal Impedance Parameters • Built–In Matching Network for Broadband Operation • Tested for .

  MRF6414   MRF6414







RF POWER TRANSISTOR

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6414/D NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts Minimum Gain = 8.5 dB @ 960 MHz, Class AB Minimum Efficiency = 50% @ 960 MHz, 50 Watts • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Circuit Board Photomaster Available by Ordering Document MRF6414PHT/D from Motorola Literature Distribution. MRF6414 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON CASE 333A– 02, STYLE 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 28 65 4 6 134 0.77 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.3 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = 20 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector–Emitter Leakage Current (VCE = 30 Vdc, RBE = 75 Ω) ON CHARACTERISTICS DC Current Gain (ICE = 1 Adc, VCE = 5 Vdc) hFE.


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