MRF555

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF555/D The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60% (Typ) Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF555 1.5 W, 470 MHz RF LOW POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 16 Vdc Collector–Base Voltage VCBO 36 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 400 mAdc Operating Junction Temperature TJ 150 °C Total Device Dissipation @ TC = 75°C (1, 2) Derate above 75°C Storage Temperature Range PD 3.0 Watts 40 mW/°C Tstg – 55 to +150 °C CASE 317D–02, STYLE 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) V(BR)CEO 16 — — Vdc Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 36 — — Vdc Emitter–Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc Collector Cuto...