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MRF476 Datasheet

Part Number MRF476
Manufacturers ETC
Logo ETC
Description Silicon NPN Transistor
Datasheet MRF476 DatasheetMRF476 Datasheet (PDF)

MRF476 Silicon NPN Transistor Final RF Power Output The MRF476 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75V Collector-Base Voltage, VCBO 80V Emitter-Base Voltage, VEBO 5V Collector Current, IC Continuous 3A Peak 5A Collector Power Dissipation (TA = +25°C), PD 1.

  MRF476   MRF476






Part Number MRF476
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Datasheet MRF476 DatasheetMRF476 Datasheet (PDF)

MRF476 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-220AB (COMMON EMITTER) DESCRIPTION: The ASI MRF476 is Designed for 12.5 V FM Large-Signal Amplifier Applications to 30 MHz. MAXIMUM RATINGS IC VCE VCB PDISS TSTG θJC 1.0 A 18 V 36 V 10 W @ TC = 25 °C -65 °C to +150 °C 17.5 °C/W 1 = BASE 3 = EMITTER 2 = COLLECTOR TAB = COLLECTOR CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE Cob GPE η IMD IC = 10 mA IC = 25 mA IE = 1.0 mA VCB = 15 V VCE = 5.0 V TC = 25 °C TEST CONDITIONS MINIMUM TY.

  MRF476   MRF476







Part Number MRF476
Manufacturers HGSemi
Logo HGSemi
Description HG RF POWER TRANSISTOR
Datasheet MRF476 DatasheetMRF476 Datasheet (PDF)

HG Semiconductors MRF476HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION: The HG MRF476 is Designed for 12.5 V FM Large-Signal Amplifier Applications to 30 MHz. PACKAGE STYLE TO-220AB (COMMON EMITTER) MAXIMUM RATINGS IC 1.0 A VCE 18 V VCB 36 V PDISS 10 W @ TC = 25 °C TSTG -65 °C to +150 °C JC 17.5 °C/W 1 = BASE 2 = COLLECTOR 3 = EMITTER TAB = COLLECTOR CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS BVCEO IC = 10 mA BVCES IC = 25 mA BVEBO .

  MRF476   MRF476







Part Number MRF476
Manufacturers ELEFLOW TECHNOLOGIES
Logo ELEFLOW TECHNOLOGIES
Description NPN Silicon RF power transistor
Datasheet MRF476 DatasheetMRF476 Datasheet (PDF)

ELEFLOW TECHNOLOGIES www.eleflow.com MRF476 NPN Silicon RF power transistor MRF476 Description: MRF476 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. Maximum Ratings: Symbol BVCES BVCEO BVEBO IC Ptot TSTG TjM Test Conditions IC=5 mA IC=15 mA IE=3 mA Characteristics Max. 35 Max. 18 Max. 4 Max. 1 Max. 8 Min. -65 Max. 150 Max. 175 Units V V V A W Characteristics at TU = 25.

  MRF476   MRF476







Silicon NPN Transistor

MRF476 Silicon NPN Transistor Final RF Power Output The MRF476 is a silicon NPN transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = 150 Ohm), VCER 75V Collector-Base Voltage, VCBO 80V Emitter-Base Voltage, VEBO 5V Collector Current, IC Continuous 3A Peak 5A Collector Power Dissipation (TA = +25°C), PD 1.2W Collector Power Dissipation (TC = +50°C), PD 10W Operating Junction Temperature, TJ +150°C Storage Temperature Range, Tstg -55° to +150°C Electrical Characteristics: (TC = +25°C unless otherwise specified) BCE Parameter Symbol Test Conditions Collector-Base Breakdown Voltage V(BR)CBO IC = 100µA, IB = 0 Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohm Emitter-Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 Collector Cutoff Current ICBO VCB = 40V.


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