MRF455

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF455/D NPN Silicon RF Power Transistor . . . designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics — Output Power = 60 Watts Minimum Gain = 13 dB Efficiency = 55% MATCHING PROCEDURE In the push–pull circuit configuration it is preferred that the transistors are used as matched pairs to obtain optimum performance. The matching procedure used by Motorola consists of measuring h FE at the data sheet conditions and color coding the device to predetermined hFE ranges within the normal hFE limits. A color dot is added to the marking on top of the cap. Any two devices with the same color dot can be paired together to form a matched set of units. MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Tstg Value 18 36 4.0 15 175 1.0 – 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C MRF455 60 W, 30 MHz RF POWER TRANSISTOR NPN SILICON CASE 211–07, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.0 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB...