MRF4427R2

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF4427/D NPN Silicon RF Low Power Transistor Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount components. Suitable for use as output driver or pre–driver stages in VHF and UHF equipment. Low Cost SORF Plastic Surface Mount Package Guaranteed RF Specification — |S21|2 S–Parameter Characterization Low Voltage Version of MRF3866 Tape and Reel Packaging Available. R2 suffix = 2,500 units per reel MRF4427R2 1.0 W, 175 MHz HIGH–FREQUENCY TRANSISTOR NPN SILICON CASE 751–05, STYLE 1 SORF (SO–8) MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 75°C Derate above 75°C Operating Junction and Storage Temperature Range Symbol VCEO VCBO VEBO IC PD TJ, Tstg Symbol RθJC Value 20 40 2.0 400 1.67 22.2 – 65 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Max 45 Unit °C/W DEVICE MARKING MRF4427 = 4427 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 5.0 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, RBE = 10 ohms) Emitter–Base Breakdown Voltage (IE = 100 µAdc) Collector Cutoff Current (VCE = 12 Vdc, IB = 0) V(BR)CEO V(...