MRF373ALR1

NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applica- tions in 28/32 volt transmitter equipment. Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture Output Power — 75 Watts Power Gain — 18.2 dB Efficiency — 60% D Capable of Handling 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW Output Power Features Integrated ESD Protection Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters G Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. RoHS Compliant In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel. S Document Number: MRF373A Rev. 7, 9/2008 MRF373ALR1 MRF373ALSR1 470 - 860 MHz, 75 W, 32 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 360B - 05, STYLE 1 NI - 360 MRF373ALR1 CASE 360C - 05, STYLE 1 NI - 360S MRF373ALSR1 Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. E...