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MRF315A Datasheet

Part Number MRF315A
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Datasheet MRF315A DatasheetMRF315A Datasheet (PDF)

MRF315A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF315A is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • PG = 9.0 dB min. at 45 W/ 150 MHz • Withstands 30:1 Load VSWR • Omnigold™ Metalization System B C E ØC E B H I J MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC O O D 5.0 A 65 V 35 V 4.0 V 75 W -65 C to +200 C -65 C to +150 C 2.3 C/W O O O DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches.

  MRF315A   MRF315A






Part Number MRF315
Manufacturers Motorola
Logo Motorola
Description NPN Silicon RF Power Transistors
Datasheet MRF315A DatasheetMRF315 Datasheet (PDF)

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

  MRF315A   MRF315A







Part Number MRF315
Manufacturers Eleflow Tech
Logo Eleflow Tech
Description NPN Silicon RF Power Transistor
Datasheet MRF315A DatasheetMRF315 Datasheet (PDF)

ELEFLOW TECHNOLOGIES www.eleflow.com MRF315 NPN Silicon RF power transistor MRF315 Description: MRF315 is designed for class C VHF mobile radio power amplifier applications operating. Maximum Ratings at TU = 25 Symbol www.DataSheet4U.com Test Conditions IC=10 mA IC=30 mA IE=5 mA Characteristics Max. Max. Max. Max. Max. Min. Max. Max. f=150 MHz ) Characteristics Typ. Typ. Typ. 45 10 50 45 1.2 5 60 65 35 4 4 110 -65 150 200 BVCES BVCEO BVEBO IC Ptot TSTG TjM Units V V V A W Characteristi.

  MRF315A   MRF315A







NPN SILICON RF POWER TRANSISTOR

MRF315A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF315A is Designed for Class C Power Amplifier Applications up to 200 MHz. PACKAGE STYLE .380 4L STUD .112x45° A FEATURES: • PG = 9.0 dB min. at 45 W/ 150 MHz • Withstands 30:1 Load VSWR • Omnigold™ Metalization System B C E ØC E B H I J MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC O O D 5.0 A 65 V 35 V 4.0 V 75 W -65 C to +200 C -65 C to +150 C 2.3 C/W O O O DIM A B C D E F G H I J #8-32 UNC-2A F E G MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05 ORDER CODE: ASI10757 O CHARACTERISTICS SYMBOL BVCEO BVCES BVCBO BVEBO ICBO hFE Cob PG ηC Ψ TC = 25 C NONETEST CONDITIONS IC = 200 mA IC = 200 mA IC = 10 mA IE = 10 mA VCB = 30 V VCE = 5.0 V VCB = 30 V IC = 500 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 35 65 65 4.0 4.0 5.0 200 65 9.0 50 11 60 UNITS V V V V mA --pF dB % VCE = 28 V POUT = 45 W f = 150 MHz 30:1 minimum without degration in output power A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 .


2005-09-21 : MFC8020A    MFC8021A    MFC8022A    2SC1335    M54529P    M54529AP    82530    UPD449    74S140    74S140   


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