The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
Description
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The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier a...
