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MRF284 Datasheet

Part Number MRF284
Manufacturers Motorola
Logo Motorola
Description RF Power Field-Effect Transistors
Datasheet MRF284 DatasheetMRF284 Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF284/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and wireless local loop. • Specified Two–Tone Performance @ 2000 MHz, 26 Volt.

  MRF284   MRF284






Part Number MRF286S
Manufacturers Motorola
Logo Motorola
Description The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
Datasheet MRF284 DatasheetMRF286S Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document from WISD RF Marketing The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and WLL applications. • Specified Two–Tone Performance @ 2000 MHz.

  MRF284   MRF284







Part Number MRF286
Manufacturers Motorola
Logo Motorola
Description The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
Datasheet MRF284 DatasheetMRF286 Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document from WISD RF Marketing The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and WLL applications. • Specified Two–Tone Performance @ 2000 MHz.

  MRF284   MRF284







Part Number MRF284S
Manufacturers Motorola
Logo Motorola
Description RF Power Field-Effect Transistors
Datasheet MRF284 DatasheetMRF284S Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF284/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and wireless local loop. • Specified Two–Tone Performance @ 2000 MHz, 26 Volt.

  MRF284   MRF284







Part Number MRF284LSR1
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF284 DatasheetMRF284LSR1 Datasheet (PDF)

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 17, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN - PCS/cellular radio and wireless local loop. • Specified Two - Tone Performance @ 2000 MHz, 26 Volts Output Pow.

  MRF284   MRF284







Part Number MRF284LR1
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF284 DatasheetMRF284LR1 Datasheet (PDF)

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 17, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in Class A and Class AB for PCN - PCS/cellular radio and wireless local loop. • Specified Two - Tone Performance @ 2000 MHz, 26 Volts Output Pow.

  MRF284   MRF284







RF Power Field-Effect Transistors

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF284/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN–PCS/cellular radio and wireless local loop. • Specified Two–Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts (PEP) Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = –29 dBc • Typical Single–Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts (CW) Power Gain = 9.5 dB Efficiency = 45% • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW) Output Power MRF284 MRF284S 30 W, 2000 MHz, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 360B–01, STYLE 1 (MRF284) CASE 360C–03, STYLE 1 (MRF284S) MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 ± 20 87.5 0.5 – 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.0 Unit °C/W ELECTRICAL .


2007-12-10 : 10358    KM62256A    MRF281SR1    MRF281ZR1    MRF282S    MRF282Z    MRF284    MRF284S    MRF286    MRF286S   


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