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MRF282Z Datasheet

Part Number MRF282Z
Manufacturers Motorola
Logo Motorola
Description LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Datasheet MRF282Z DatasheetMRF282Z Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF282/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two–Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (PEP) Power Gain = 11 dB Efficiency = 30% Inter.

  MRF282Z   MRF282Z






Part Number MRF282ZR1
Manufacturers NXP
Logo NXP
Description RF Power Field Effect Transistors
Datasheet MRF282Z DatasheetMRF282ZR1 Datasheet (PDF)

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts PEP Power Gain — 10.5 dB Efficiency — 28% Int.

  MRF282Z   MRF282Z







Part Number MRF282SR1
Manufacturers NXP
Logo NXP
Description RF Power Field Effect Transistors
Datasheet MRF282Z DatasheetMRF282SR1 Datasheet (PDF)

ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two--Tone Performance @ 2000 MHz, 26 Volts Output Power — 10 Watts PEP Power Gain — 10.5 dB Efficiency — 28% Int.

  MRF282Z   MRF282Z







Part Number MRF282S
Manufacturers Motorola
Logo Motorola
Description LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Datasheet MRF282Z DatasheetMRF282S Datasheet (PDF)

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF282/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two–Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (PEP) Power Gain = 11 dB Efficiency = 30% Inter.

  MRF282Z   MRF282Z







LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF282/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two–Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (PEP) Power Gain = 11 dB Efficiency = 30% Intermodulation Distortion = –30 dBc • Specified Single–Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts (CW) Power Gain = 11 dB Efficiency = 40% • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels • Excellent Thermal Stability • Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts (CW) Output Power • Gold Metallization for Improved Reliability MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ MRF282S MRF282Z 10 W, 2000 MHz, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 458–03, STYLE 1 (MRF282S) CASE 458A–01, STYLE 1 (MRF282Z) Value 65 ± 20 60 0.34 – 65 to +150 200 Unit Vdc Vdc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.9 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°.


2007-12-10 : 10358    KM62256A    MRF281SR1    MRF281ZR1    MRF282S    MRF282Z    MRF284    MRF284S    MRF286    MRF286S   


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