MRF182S

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF182/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs High Gain, Rugged Device Broadband Performance from HF to 1 GHz Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances D MRF182 MRF182S 30 W, 1.0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs G CASE 360B–01, STYLE 1 (MRF182) S CASE 360C–03, STYLE 1 (MRF182S) MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 70°C Derate above 70°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 ± 20 74 0.57 – 65 to +150 200 Unit Vdc Vdc W W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.75 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 1.0 mAdc) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate–Source Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 – – – – – – 1 1 Vdc µAdc µAdc NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 MRF182 1 ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted) Characteristic Symbol...