RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Description
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Freescale Semiconductor Technical Data
Document Number: MRF18030B Rev. 7, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for...
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