MRF1535T1

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1535T1/D The RF MOSFET Line RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment. Specified Performance @ 520 MHz, 12.5 Volts Output Power — 35 Watts Power Gain — 10.0 dB Efficiency — 50% Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Broadband–Full Power Across the Band: 135–175 MHz 400–470 MHz 450–520 MHz Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. N–Channel Enhancement–Mode Lateral MOSFETs MRF1535T1 MRF1535FT1 520 MHz, 35 W, 12.5 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 1264–09, STYLE 1 TO–272 PLASTIC MRF1535T1 CASE 1264A–02, STYLE 1 TO–272 STRAIGHT LEAD PLASTIC MRF1535FT1 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 40 ±20 6 135 0.50 –65 to +150 175 Unit Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERIST...