( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1517/D
The RF MO...
( DataSheet : www.DataSheet4U.com )
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF1517/D
The RF
MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral
MOSFETs
The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 volt portable FM equipment. Specified Performance @ 520 MHz, 7.5 Volts D Output Power — 8 Watts Power Gain — 11 dB Efficiency — 55% Characterized with Series Equivalent Large–Signal Impedance Parameters Excellent Thermal Stability Capable of Handling 20:1 VSWR, @ 9.5 Vdc, G 520 MHz, 2 dB Overdrive Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request S RF Power Plastic Surface Mount Package Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MRF1517T1
520 MHz, 8 W, 7.5 V LATERAL N–CHANNEL BROADBAND RF POWER
MOSFET
CASE 466–02, STYLE 1 (PLD–1.5) PLASTIC
MAXIMUM RATINGS
Rating Drain–Source
Voltage (1) Gate–Source
Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C (2) Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 25 ± 20 4 62.5 0.50 – 65 to +150 150 Unit Vdc Vdc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (1) Not designed for 12.5 volt appl...