MRF15030

( DataSheet : www.DataSheet4U.com ) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF15030/D The RF Line NPN Silicon RF Power Transistor Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400 – 1600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics: Output Power — 30 Watts Gain — 9 dB Min @ 30 Watts (PEP) Efficiency — 30% Min @ 30 Watts (PEP) Intermodulation Distortion — – 30 dBc Max @ 30 Watts (PEP) Third Order Intercept Point — 53.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc, IC = 2.5 Adc Characterized with Series Equivalent Large–Signal Parameters from 1400–1600 MHz Characterized with Small Signal S–Parameters from 1000 – 2000 MHz Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at all Phase Angles with 3:1 Load VSWR @ 28 Vdc, at Rated Output Power Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector–Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case Symbol RθJC Symbol Min MRF15030 30 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON...