MRF1002

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF1002MA/D Microwave Pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Standard Package Nitride Passivated Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Internal Input Matching for Broadband Operation Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Symbol RθJC Value 20 50 3.5 250 7.0 40 – 65 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C MRF1002MA MRF1002MB 2.0 W (PEAK), 960 – 1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON CASE 332–04, STYLE 1 MRF1002MA THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) Max 25 Unit °C/W CASE 332A–03, STYLE 1 MRF1002MB ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) Collector–Emitter Breakdown V...