MRA1417-2

MRA1417-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz. FEATURES INCLUDE: Gold Metallization Emitter Ballasting Input Matching MAXIMUM RATINGS IC 0.5 A VCBO 50 V PDISS 12 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 15 °C/W PACKAGE STYLE 250 2L FLG (C) 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS BVCES IC = 20 mA BVEBO IE = 0.25 mA ICBO VCB = 28 V hFE VCE = 5.0 V IC = 100 mA MINIMUM TYPICAL MAXIMUM 50 3.5 0.5 10 100 Cob VCB = 28 V f = 1.0 MHz 4.5 PG ηC VCE = 28 V POUT = 2.0 W f = 1700 MHz 8.0 45 UNITS V V mA --- pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...