MPSW13

MPSW13 One Watt Darlington Transistor NPN Silicon Features http://onsemi.com COLLECTOR 3 BASE 2 Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg Value 30 30 10 1.0 1.0 8.0 2.5 20 −55 to +150 Unit Vdc Vdc Vdc Adc W mW/°C W mW/°C °C 1 2 EMITTER 1 TO−92 (TO−226) CASE 29−10 STYLE 1 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC www.DataSheet4U.com Max 125 50 Unit °C/W °C/W MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. MPS W13 AYWW G G MPSW13 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPSW13RLRA MPSW13RLRAG Package TO−92 TO−92 (Pb−Free) Shipping † 2,000/Tape & Reel 2,000/Tape & Reel *For additional information on our Pb−Free strategy and soldering details, please download ...