MPSA77

MPSA77 MPSA77 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800mA. Sourced from process 61. 1 TO-92 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol VCES VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value -60 -60 -10 -1.2 -55 ~ +150 Units V V V A °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR)CES ICBO IEBO hFE VCE(sat) VBE(on) fT Parameter Test Condition IC = -100µA, IB = 0 VCB = -30V, IE = 0 VEB = -10V, IC = 0 IC = -10mA, VCE = -5.0V IC = -100mA, VCE = -5.0V IC = -100mA, IB = -0.1mA IC = -100mA, VCE = -5.0mA IC = -10mA, VCE = -5.0V f = 100MHz 100 10,000 10,000 -1.5 -2.0 V V MHz Min. -60 -100 -100 Max. Units V nA nA Collector-Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Dandwidth Product On Characteristics * Small Signal Chara...