MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSA75/D
Darlington Transistors
PNP Silicon
MPSA75 MPSA...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSA75/D
Darlington Transistors
PNP Silicon
MPSA75 MPSA77
COLLECTOR 3 BASE 2
EMITTER 1
MAXIMUM RATINGS
Rating Collector – Emitter
Voltage Emitter – Base
Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VEBO IC PD TJ, Tstg MPSA75 –40 –10 –500 625 5.0 – 55 to +150 MPSA77 –60 Unit Vdc Vdc Adc mW mW/°C °C
1 2 3
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol Rq JA Max
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Unit °C/W
200
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown
Voltage (IC = –100 µAdc, VBE = 0) Collector – Base Breakdown
Voltage (IC = 100 m Adc, IE = 0) Collector Cutoff Current (VCB= –30 V, IE = 0) (VCB = –50 V, IE = 0) Collector Cutoff Current (VCE = –30 V, VBE = 0) (VCE = –50 V, VBE = 0) Emitter Cutoff Current (VEB = –10 Vdc) MPSA75 MPSA77 MPSA75 MPSA77 MPSA75 MPSA77 ICES MPSA75 MPSA77 IEBO — — — — — — –500 –500 –100 nAdc V(BR)CES V(BR)CBO ICBO — — — — –100 –100 nAdc –40 –60 –40 –60 — — — — — — — — Vdc Vdc nAdc
ON CHARACTERISTICS
DC Current Gain (IC = –10 mA, VCE = –5.0 V) (IC = –100 mA, VCE = –5.0 V) Collector – Emitter Saturation
Voltage (IC = –100 mA, IB = –0.1 mAdc) Base – Emitter On
Voltage (IC = –100 mA, VCE = –5.0 Vdc) hFE 10,000 1...