MPSA75

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA75/D Darlington Transistors PNP Silicon MPSA75 MPSA77 COLLECTOR 3 BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VEBO IC PD TJ, Tstg MPSA75 –40 –10 –500 625 5.0 – 55 to +150 MPSA77 –60 Unit Vdc Vdc Adc mW mW/°C °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol Rq JA Max www.DataSheet4U.com Unit °C/W 200 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0) Collector – Base Breakdown Voltage (IC = 100 m Adc, IE = 0) Collector Cutoff Current (VCB= –30 V, IE = 0) (VCB = –50 V, IE = 0) Collector Cutoff Current (VCE = –30 V, VBE = 0) (VCE = –50 V, VBE = 0) Emitter Cutoff Current (VEB = –10 Vdc) MPSA75 MPSA77 MPSA75 MPSA77 MPSA75 MPSA77 ICES MPSA75 MPSA77 IEBO — — — — — — –500 –500 –100 nAdc V(BR)CES V(BR)CBO ICBO — — — — –100 –100 nAdc –40 –60 –40 –60 — — — — — — — — Vdc Vdc nAdc ON CHARACTERISTICS DC Current Gain (IC = –10 mA, VCE = –5.0 V) (IC = –100 mA, VCE = –5.0 V) Collector – Emitter Saturation Voltage (IC = –100 mA, IB = –0.1 mAdc) Base – Emitter On Voltage (IC = –100 mA, VCE = –5.0 Vdc) hFE 10,000 1...