MPS4126

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS4125/D Amplifier Transistors PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS4125 MPS4126 1 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg MPS4125 –30 –10 –4.0 –200 625 5.0 1.5 12 – 55 to +150 MPS4126 –25 –25 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –1.0 mA, IB = 0) Collector – Base Breakdown Voltage (IC = –10 m A, IE = 0) Emitter – Base Breakdown Voltage (IC = 0, IE = –10 m A) Collector Cutoff Current (VCB = –20 V, IE = 0) Emitter Cutoff Current (VEB = –3.0 V, IC = 0) MPS4125 MPS4126 MPS4125 MPS4126 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO –30 –25 –30 –25 –4.0 — — — — — — — –50 –50 Vdc Vdc Vdc nAdc nAdc REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPS4125 MPS4126 ELECTRICAL CHARACTERISTICS (TA = 25°C unles...