MPQ2222

www.DataSheet4U.com MPQ2222 MPQ2222A NPN SILICON QUAD TRANSISTOR TO-116 CASE 145 Adams Ave., Hauppauge, NY 11788 USA Phone (631) 435-1110 FAX (631) 435-1824 www.centralsemi.com Manufacturers of World Class Discrete Semiconductors DESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ2222, MPQ2222A types are comprised of four independent Silicon NPN Transistors mounted in a 14 PIN DIP, designed for general purpose amplifier and switching applications. MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (Each Transistor) Power Dissipation (Total Package) Operating and Storage Junction Temperature Thermal Resistance (Total Package) SYMBOL VCBO VCEO VEBO IC PD PD TJ,Tstg ΘJA UNITS V V V mA mW W °C °C/W 60 40 5.0 500 650 1.9 -65 to +150 66 MPQ2222A MIN MAX 10 100 75 40 6.0 0.3 1.0 1.2 2.0 35 50 75 100 40 200 8.0 30 35 285 DataShee ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) DataSheet4U.comMPQ2222 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=50V 50 ICBO VCB=60V IEBO VEB=3.0V 100 BVCBO IC=10µA 60 BVCEO IC=10mA 40 BVEBO IE=10µA 5.0 VCE(SAT) IC=150mA, IB=15mA 0.4 VCE(SAT) IC=300mA, IB=30mA 1.6 VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA 1.3 VBE(SAT) IC=300mA, IB=30mA 2.6 VBE(SAT) IC=500mA, IB=50mA hFE VCE=10V, IC=100µA hFE VCE=10V, IC=1.0mA hFE VCE=10V, IC=10mA 75 hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=300mA 30 hFE VCE=10V, IC=500mA fT VCE=20V, IC=20mA, f=100MHz 200 Cob VCB=10V, IE=...