EEPROMs
MN61113, MN61113S
2K-Bit EEPROMs
Overview
The MN61113 and MN61113S are 2048-bit, bit sequential EEPROMs with built-in address counters. They sequentially increment the address with the clock input to produce serial output. They include built-in charge pump circuit and timer for automatically erasing, writing, and modifying data using only a single 3 volt power supply. To reduce write times, they include a block write function for writing up to 32 bits at a time. This function makes it p.
2K-Bit EEPROMs
EEPROMs
MN61113, MN61113S
2K-Bit EEPROMs
Overview
The MN61113 and MN61113S are 2048-bit, bit sequential EEPROMs with built-in address counters. They sequentially increment the address with the clock input to produce serial output. They include built-in charge pump circuit and timer for automatically erasing, writing, and modifying data using only a single 3 volt power supply. To reduce write times, they include a block write function for writing up to 32 bits at a time. This function makes it possible to rewrite the contents of all 2048 bits within 1 second (typ.).
Pin Assignment
MN61113 MN61113S DIP008-P-0300A SOP008-P-0225
DATA CE VCC GND
1 2 3 4
8 7 6 5
OE RST CLK PGM
Features
2048 words × 1 bit organization Built-in reset function Tristate output Low power consumption • 3 volt read: 1.5 mW (max.) • 3 volt program: 6 mW (max.) • 3 volt standby: 60 µW (max.) Single 3 volt power supply (charge pump circuit built in) Self timer for use in automatically erasing and writing data Built-in data polling function Write cycles: 105 times Data storage interval: 10 years Pull-up resistor on CE pin. Pull-down resistors on PGM, CLK, and RST pins (TOP VIEW)
Applications
Personal wireless equipment, cordless telephones, storage for recognition and adjustment data for terminals, etc.
1
MN61113, MN61113S
Block Diagram
EEPROMs
Data latch pump
Clock generator
8-bit counter
CLK
6
Row decoder
64 × 16 cell matrix
3
VCC GND
4
RST
7
CE OE PGM
2 8 5 Control logic
Column de.