MMPQ6700
MMPQ6700
E2 B1 E3 B2 B4 E4 B3
E1
SOIC-16
C1
C3 C2 C2 C1
C4 C C3 4
TRANSIST OR TRANSISTOR C1 B1 C3 B3 E1 ...
MMPQ6700
MMPQ6700
E2 B1 E3 B2 B4 E4 B3
E1
SOIC-16
C1
C3 C2 C2 C1
C4 C C3 4
TRANSIST OR TRANSISTOR C1 B1 C3 B3 E1 & E3 & C2 B2 E2 C4 B4 E4
TYPE NPN PNP
Quad NPN & PNP General Purpose Amplifier
These complimentary devices can be used in switches with collector currents of 10 µA to 100 mA. These devices are best used when space is the primary consideration. Sourced from Process 23 & 66. See 2N3904 (NPN) & 2N3906 (PNP) for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base
Voltage Emitter-Base
Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter
Voltage
Value
40 40 5.0 200 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die
Max
MMPQ6700 1000 8.0 125 240
Units
mW mW/°C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
MMPQ6700
Quad NPN & PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 2...