PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A
Discrete POWER & Signal Technologies
PN2907A
MMBT2907A
C
PZT2907...
PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A
Discrete POWER & Signal Technologies
PN2907A
MMBT2907A
C
PZT2907A
C
E C B
E C B
TO-92
E
SOT-23
Mark: 2F
B
SOT-223
MMPQ2907
E B E B E B
NMT2907
C2 E1 C1 C B2 E2
E
B
SOIC-16
C
C
C
C
C
C
C
SOT-6
Mark: .2B
B1
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
60 60 5.0 800 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
ã 1997 Fairchild Semiconductor Corporation
PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO IB ICEX ICBO Collector-Emitter Breakdown
Voltage* Collector-Base Breakdown
Voltage Emitter-Base Breakdown Voltag...