PN2369A / MMBT2369A / MMPQ2369
Discrete POWER & Signal Technologies
PN2369A
MMBT2369A
C
MMPQ2369
B E B E B
E
B
E
...
PN2369A / MMBT2369A / MMPQ2369
Discrete POWER & Signal Technologies
PN2369A
MMBT2369A
C
MMPQ2369
B E B E B
E
B
E
E C BE
TO-92
SOT-23
Mark: 1S
B
SOIC-16
C
C
C
C
C
C
C
C
NPN Switching Transistor
This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter
Voltage Collector-Base
Voltage Emitter-Base
Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
15 40 4.5 200 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Effective 4 Die Each Die PN2369A 350 2.8 125 357
Max
MMBT2369A* 225 1.8 556 125 240 MMPQ2369 1,000 8.0
Units
mW mW/ °C °C/W °C/W °C/W °C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
© 1997 Fairchild Semiconductor Corporation
PN2369A / MMBT2369A / MMPQ2369
NPN Switching Transistor
(continued)
E...