www.DataSheet4U.com
MMJT350T1 Bipolar Power Transistors
PNP Silicon
Bipolar power transistors are designed for use in l...
www.DataSheet4U.com
MMJT350T1 Bipolar Power Transistors
PNP Silicon
Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability.
Features
http://onsemi.com
High Collector−Emitter Sustaining
Voltage −
VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc Excellent DC Current Gain − hFE = 30−240 @ IC = 50 mAdc Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V Pb−Free Package is Available
0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS, 2.75 WATTS
C 2,4
B1
E3
Schematic
4 1
2 3
SOT−223 CASE 318E STYLE 1
MARKING DIAGRAM
AYW T350 G G
A = Assembly Location Y = Year W = Work Week G = Pb−Free Package T350 = Device Code (Note: Microdot may be in either location)
ORDERING INFORMATION
Device MMJT350T1 MMJT350T1G Package SOT−223 SOT−223 (Pb−Free) Shipping † 1000 / Tape & Reel 1000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
January, 2006 − Rev. 2
Publication Order Number: MMJT350T1/D
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ...