MMF80R450P Datasheet
MMF80R450P
800V 0.45Ω N-channel MOSFET
Description
MMF80R450P is power MOSFET using Magnachip’s ...
MMF80R450P Datasheet
MMF80R450P
800V 0.45Ω N-channel
MOSFET
Description
MMF80R450P is power
MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 850 0.45
3 11 37.6
Unit V Ω V A nC
Package & Internal Circuit D
GDS
G S
Features
Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package – Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages Switching Applications Adapter
Ordering Information
Order Code MMF80R450PTH
Marking 80R450P
Temp. Range -55 ~ 150℃
Package TO-220F
Packing Tube
RoHS Status Halogen Free
Jun. 2021. Revision 1.2
1
Magnachip Semiconductor Ltd.
MMF80R450P Datasheet
Absolute Maximum Rating (Tc=25℃ unless otherwise specified)
Parameter Drain – Source
voltage Gate – Source
voltage
Symbol VDSS VGSS
Continuous drain current(2)
ID
Pulsed drain current(3)
IDM
Power dissipation
PD
Single - pulse avalanche energy
EAS
MOSFET dv/dt ruggedness
dv/dt
Diode dv/dt ruggedness(5)
dv/dt
Storage temperature
Tstg
Maximum operating junction Temperature
Tj
1) ID limited by maximum junction temperature.
2) Pulse width tP limited by Tj,max 3) DC input v...