MMF60R115P

MMF60R115P Datasheet MMF60R115P 600V 0.115Ω N-channel MOSFET  Description MMF60R115P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.  Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.115 3 33 79 Unit V Ω V A nC  Package & Internal Circuit D GDS G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Ordering Information Order Code MMF60R115PTH Marking 60R115P Temp. Range -55 ~ 150oC Package TO-220F Packing Tube RoHS Status Compliant Jun. 2021 Revision 1.4 1 Magnachip Semiconductor Ltd. MMF60R115P Datasheet  Absolute Maximum Rating (Tc=25oC unless otherwise specified) Parameter Drain – Source voltage Gate – Source voltage Symbol VDSS VGSS Continuous drain current (2) ID Pulsed drain current (3) IDM Power dissipation PD Single - pulse avalanche energy EAS MOSFET dv/dt ruggedness dv/dt Diode dv/dt ruggedness (5) dv/dt Storage temperature Tstg Maximum operating junction temperature Tj 1) Id limited by maximum junction temperature 2) Pulse width tP limited by Tj,max 3) DC input v...